Example embodiments may provide fine patterns for semiconductor devices and methods of forming fine patterns for semiconductor devices. Example methods may include forming a spacer pattern on a substrate and/or an insulating layer pattern adjacent to sides of the spacer pattern and/or disposed at the same level as the spacer pattern, forming a pair of recesses exposing sides of the spacer pattern by removing a portion of the insulating layer pattern, and/or filling a conductive material in the recesses.