Invention Grant
- Patent Title: Annealing to improve edge roughness in semiconductor technology
- Patent Title (中): 退火以提高半导体技术的边缘粗糙度
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Application No.: US11615456Application Date: 2006-12-22
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Publication No.: US07704883B2Publication Date: 2010-04-27
- Inventor: Stephanie W. Butler , Yuanning Chen
- Applicant: Stephanie W. Butler , Yuanning Chen
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A method for manufacturing a semiconductor device. The method comprises depositing a material layer on a semiconductor substrate and patterning the material layer with a patterning material. Patterning forms a patterned structure of a semiconductor device, wherein the patterned structure has a sidewall with a roughness associated therewith. The method also comprises removing the patterning material from the patterned structure and annealing an outer surface of the patterned structure such that the roughness is reduced.
Public/Granted literature
- US20080150045A1 ANNEALING TO IMPROVE EDGE ROUGHNESS IN SEMICONDUCTOR TECHNOLOGY Public/Granted day:2008-06-26
Information query
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