Invention Grant
- Patent Title: Method of producing semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US12078086Application Date: 2008-03-27
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Publication No.: US07704891B2Publication Date: 2010-04-27
- Inventor: Sadaharu Tamaki
- Applicant: Sadaharu Tamaki
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kubotera & Associates, LLC
- Priority: JP2007-111524 20070420
- Main IPC: H01L21/461
- IPC: H01L21/461
Abstract:
A method of producing a semiconductor device includes the steps of: preparing a base member; laminating sequentially a barrier film formed of titanium nitride, a wiring portion film formed of tungsten, and a mask film formed of titanium nitride on the base member to form a multi-layer film; forming a resist mask on the mask film so that the resist mask covers a wiring portion forming area and exposes a wiring portion non-forming area; etching the mask film using a first gas in which titanium nitride has a large etching ratio with respect to tungsten; and etching the wiring portion film using a second gas in which tungsten has a large etching ratio with respect to titanium nitride so that a portion of the wiring portion film in the wiring portion non-forming area is removed and a portion of the wiring portion film in the wiring portion forming area remains.
Public/Granted literature
- US20080261391A1 Method of producing semiconductor device Public/Granted day:2008-10-23
Information query
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