Invention Grant
US07704893B2 Semiconductor device, method for manufacturing semiconductor device and gas for plasma CVD
有权
半导体装置，半导体装置的制造方法以及等离子体CVD用气体
- Patent Title: Semiconductor device, method for manufacturing semiconductor device and gas for plasma CVD
- Patent Title (中): 半导体装置，半导体装置的制造方法以及等离子体CVD用气体
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Application No.: US10568461Application Date: 2004-08-12
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Publication No.: US07704893B2Publication Date: 2010-04-27
- Inventor: Yasuo Kobayashi , Kohei Kawamura , Tadahiro Ohmi , Akinobu Teramoto , Tatsuya Sugimoto , Toshiro Yamada , Kimiaki Tanaka
- Applicant: Yasuo Kobayashi , Kohei Kawamura , Tadahiro Ohmi , Akinobu Teramoto , Tatsuya Sugimoto , Toshiro Yamada , Kimiaki Tanaka
- Applicant Address: JP Tokyo JP Miyagi-Ken JP Tokyo-To
- Assignee: Tokyo Eectron Limited,Tadahiro Ohmi,Zeon Corporation
- Current Assignee: Tokyo Eectron Limited,Tadahiro Ohmi,Zeon Corporation
- Current Assignee Address: JP Tokyo JP Miyagi-Ken JP Tokyo-To
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2003-293739 20030815; JP2003-293862 20030815; JP2003-311555 20030903
- International Application: PCT/JP2004/011595 WO 20040812
- International Announcement: WO2005/017991 WO 20050224
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.
Public/Granted literature
- US20060264059A1 Semiconductor device, method for manufacturing semiconductor device and gas for plasma cvd Public/Granted day:2006-11-23
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