Deposition method for high-k dielectric materials

Invention Grant

US07704895B2 Deposition method for high-k dielectric materials 失效

Title translation: 高k电介质材料沉积方法

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Patent Title: Deposition method for high-k dielectric materials
Patent Title (中): 高k电介质材料沉积方法
Application No.: US12061584

Application Date: 2008-04-02
Publication No.: US07704895B2

Publication Date: 2010-04-27
Inventor: Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Mansour Moinpour
Applicant: Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Mansour Moinpour
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agent John N. Greaves
Main IPC: H01L21/473
IPC: H01L21/473

Deposition method for high-k dielectric materials

Abstract:

A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound.

Abstract(Chinese):

公开了一种在半导体衬底上沉积高k电介质材料的方法。该方法包括将化学浴施加到基底表面上，冲洗表面，向基底表面施加共反应物浴，并漂洗该表面。化学浴包括至少包含铪化合物，铝化合物，钛化合物，锆化合物，钪化合物，钇化合物或镧系元素化合物的金属前体。

Public/Granted literature

US20090253270A1 DEPOSITION METHOD FOR HIGH-K DIELECTRIC MATERIALS Public/Granted day:2009-10-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理
H01L21/471	.......无机层（H01L21/475，H01L21/4757优先）
H01L21/473	........由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层