Semiconductor porcelain composition and method of producing the same

Invention Grant

US07704906B2 Semiconductor porcelain composition and method of producing the same 失效

Title translation: 半导体陶瓷组合物及其制造方法

Patent Title: Semiconductor porcelain composition and method of producing the same
Patent Title (中): 半导体陶瓷组合物及其制造方法
Application No.: US11912799

Application Date: 2006-04-28
Publication No.: US07704906B2

Publication Date: 2010-04-27
Inventor: Takeshi Shimada , Koichi Terao , Kazuya Toji
Applicant: Takeshi Shimada , Koichi Terao , Kazuya Toji
Applicant Address: JP Tokyo
Assignee: Hitachi Metals, Ltd.
Current Assignee: Hitachi Metals, Ltd.
Current Assignee Address: JP Tokyo
Agency: Stein McEwen, LLP
Priority: JP2005-133610 20050428; JP2005-289101 20050930
International Application: PCT/JP2006/309038 WO 20060428
International Announcement: WO2006/118274 WO 20061109
Main IPC: H01C7/02
IPC: H01C7/02 ; C04B35/462 ; C04B35/468 ; C04B35/475 ; H01B1/08

Abstract:

A semiconductor porcelain composition [(BiNa)x(Ba1-yRy)1-x]TiO3 with 0

Abstract(Chinese):

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IPC分类:

H	电学
H01	基本电气元件
H01C	电阻器
H01C7/00	用一层或多层薄膜或涂敷膜构成的不可调电阻器；由含或不包含绝缘材料的粉末导电材料或粉末半导体材料构成的不可调电阻器（由疏松的粉末材料或颗粒材料组成的入H01C8/00；有电位跃变势垒或表面势垒的电阻器，如场效应电阻器入H01L29/00；对电磁辐射或微粒子辐射敏感的半导体器件，如光敏电阻器入H01L31/00；体负阻效应器件入H01L47/00）
H01C7/02	.具有正温度系数的