Invention Grant
- Patent Title: Field effect transistor having reduced contact resistance and method for fabricating the same
- Patent Title (中): 具有降低的接触电阻的场效应晶体管及其制造方法
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Application No.: US11730615Application Date: 2007-04-03
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Publication No.: US07705371B2Publication Date: 2010-04-27
- Inventor: Satoshi Nakazawa , Tetsuzo Ueda
- Applicant: Satoshi Nakazawa , Tetsuzo Ueda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-151051 20060531
- Main IPC: H01L29/772
- IPC: H01L29/772
Abstract:
A field effect transistor includes a nitride semiconductor layered structure that is formed on a substrate and includes a capping layer made of a compound represented by a general formula of InxAlyGa1-yN (wherein 0
Public/Granted literature
- US20070278507A1 Field effect transistor and method for fabricating the same Public/Granted day:2007-12-06
Information query
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