Invention Grant
US07705388B2 Nonvolatile semiconductor memory device has source-line-side diode formed in a contact for connecting source line and memory cell string in direction perpendicular to substrate
失效
非易失性半导体存储器件具有源极侧二极管，形成在用于连接源极线和存储器单元串的方向垂直于衬底的触点中
- Patent Title: Nonvolatile semiconductor memory device has source-line-side diode formed in a contact for connecting source line and memory cell string in direction perpendicular to substrate
- Patent Title (中): 非易失性半导体存储器件具有源极侧二极管，形成在用于连接源极线和存储器单元串的方向垂直于衬底的触点中
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Application No.: US11828795Application Date: 2007-07-26
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Publication No.: US07705388B2Publication Date: 2010-04-27
- Inventor: Yoshihisa Iwata
- Applicant: Yoshihisa Iwata
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-203325 20060726
- Main IPC: H01L27/115
- IPC: H01L27/115
Abstract:
A nonvolatile semiconductor memory device includes: a source-line-side diode an anode region that is connected to a source line; a bit-line-side diode a cathode region that is connected to a bit line; and memory cell string connected between a cathode region of the source-line-side diode and an anode region of the bit-line-side diode. The memory cell string includes a series connection of a plurality of memory cell transistors. The source-line-side diode is formed in a contact for connecting the source line and the memory cell string in a first direction perpendicular to a semiconductor substrate. The bit-line-side diode is formed in a contact for connecting the bit line and the memory cell string in the first direction.
Public/Granted literature
- US20080048237A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2008-02-28
Information query
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