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US07705405B2 Methods for the formation of fully silicided metal gates 有权
形成完全硅化金属门的方法

Methods for the formation of fully silicided metal gates
Abstract:
An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. Methods of forming the advanced gate structure are also provided.
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