Invention Grant
- Patent Title: Semiconductor device and fuse blowout method
- Patent Title (中): 半导体器件和保险丝熔断法
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Application No.: US11425573Application Date: 2006-06-21
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Publication No.: US07705418B2Publication Date: 2010-04-27
- Inventor: Kazushi Kono , Takeshi Iwamoto , Toshiaki Yonezu
- Applicant: Kazushi Kono , Takeshi Iwamoto , Toshiaki Yonezu
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-181617 20050622
- Main IPC: H01L21/82
- IPC: H01L21/82
Abstract:
A fuse includes a fuse portion laid in such a manner that the direction of each turn of the fuse portion is parallel to the direction in which pads are arranged. The distance between the pads and the fuse portion is defined as the distance between the side of a pad facing the fuse portion and the pad nearest to the turn facing the particular side. The distance between the turn of the fuse portion and the nearest pad is the distance between the pads and the fuse portion. The pads and the fuse portion are distant from each other by a length at least ten times the width of the fuse.
Public/Granted literature
- US20060289898A1 SEMICONDUCTOR DEVICE AND FUSE BLOWOUT METHOD Public/Granted day:2006-12-28
Information query
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