Invention Grant
US07705419B2 Fuse box of semiconductor device formed using conductive oxide layer and method for forming the same
失效
使用导电氧化物层形成的半导体器件的保险丝盒及其形成方法
- Patent Title: Fuse box of semiconductor device formed using conductive oxide layer and method for forming the same
- Patent Title (中): 使用导电氧化物层形成的半导体器件的保险丝盒及其形成方法
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Application No.: US11695690Application Date: 2007-04-03
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Publication No.: US07705419B2Publication Date: 2010-04-27
- Inventor: Su Ock Chung
- Applicant: Su Ock Chung
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2006-0071775 20060728
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A fuse box of a semiconductor device includes a plurality of metal fuses formed on a first interlayer dielectric of a semiconductor substrate and previously removed in blowing regions thereof; a conductive oxidation layer formed to cover removed blowing regions of the metal fuses; a second interlayer dielectric formed on the first interlayer dielectric including the conductive oxide layer; and a plurality of plugs formed in the second interlayer dielectric to be brought into contact with the metal fuses which are removed in the blowing regions thereof.
Public/Granted literature
- US20080023788A1 FUSE BOX OF SEMICONDUCTOR DEVICE FORMED USING CONDUCTIVE OXIDE LAYER AND METHOD FOR FORMING THE SAME Public/Granted day:2008-01-31
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