Invention Grant
US07705426B2 Integration of a SiGe- or SiGeC-based HBT with a SiGe- or SiGeC-strapped semiconductor device
有权
基于SiGe或SiGeC的HBT与SiGe或SiGeC带状半导体器件的集成
- Patent Title: Integration of a SiGe- or SiGeC-based HBT with a SiGe- or SiGeC-strapped semiconductor device
- Patent Title (中): 基于SiGe或SiGeC的HBT与SiGe或SiGeC带状半导体器件的集成
-
Application No.: US11558480Application Date: 2006-11-10
-
Publication No.: US07705426B2Publication Date: 2010-04-27
- Inventor: Steven Voldman
- Applicant: Steven Voldman
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Anthony J. Canale, Esq.
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/737
Abstract:
The present invention provides an integrated semiconductor device that includes a semiconductor substrate, a first device containing a heterojunction bipolar transistor (HBT) located in a first region of the semiconductor substrate, wherein the HBT includes a base region containing a first portion of a SiGe or SiGeC layer, and a second device located in a second region of the semiconductor substrate, wherein the second device includes an interconnect containing a second portion of the SiGe or SiGeC layer. In a specific embodiment of the present invention, the second device is a memory device including a trench capacitor and a field effect transistor (FET) that are electrically connected together by the second portion of the SiGe or SiGeC layer. Alternatively, the second device is a trench-biased PNPN silicon controlled rectifier (SCR). The present invention also provides a novel reversibly programmable device or a novel memory device formed by a novel trench-biased SCR device.
Public/Granted literature
- US20080111154A1 INTEGRATION OF A SiGe- OR SiGeC-BASED HBT WITH A SiGe- OR SiGeC-STRAPPED SEMICONDUCTOR DEVICE Public/Granted day:2008-05-15
Information query
IPC分类:
