Invention Grant
- Patent Title: Semiconductor wafer and processing method for same
- Patent Title (中): 半导体晶圆及其加工方法相同
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Application No.: US11408971Application Date: 2006-04-24
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Publication No.: US07705430B2Publication Date: 2010-04-27
- Inventor: Kazuma Sekiya
- Applicant: Kazuma Sekiya
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2005-129741 20050427; JP2005-165395 20050606
- Main IPC: H01L21/544
- IPC: H01L21/544

Abstract:
A semiconductor wafer which is generally circular, and which has on its face an annular surplus region present in an outer peripheral edge portion of the face, and a circular device region surrounded by the surplus region, the device region having many semiconductor devices disposed therein. A circular concavity is formed in the back of the semiconductor wafer in correspondence with the device region, and the device region is relatively thin, while the surplus region is relatively thick.
Public/Granted literature
- US20060244096A1 Semiconductor wafer and processing method for same Public/Granted day:2006-11-02
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