Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11882568Application Date: 2007-08-02
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Publication No.: US07705451B2Publication Date: 2010-04-27
- Inventor: Kei Murayama , Yuichi Taguchi , Naoyuki Koizumi , Masahiro Sunohara , Akinori Shiraishi , Mitsutoshi Higashi
- Applicant: Kei Murayama , Yuichi Taguchi , Naoyuki Koizumi , Masahiro Sunohara , Akinori Shiraishi , Mitsutoshi Higashi
- Applicant Address: JP Nagano
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano
- Agency: Drinker Biddle & Reath LLP
- Priority: JPP.2006-212491 20060803
- Main IPC: H01L23/06
- IPC: H01L23/06

Abstract:
A semiconductor device includes a laminated substrate formed by laminating a plurality of semiconductor substrates, a concave part formed in the laminated substrate, and a semiconductor element mounted in the concave part. A method of manufacturing a semiconductor device includes a first step of forming a laminated substrate by laminating a plurality of semiconductor substrates, a second step of forming a concave part by etching the laminated substrate, and a third step of mounting a semiconductor element in the concave part.
Public/Granted literature
- US20080029852A1 Semiconductor device and method of manufacturing the same Public/Granted day:2008-02-07
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