Invention Grant
US07705660B2 Substrate bias voltage generator and method of generating substrate bias voltage
失效
衬底偏置电压发生器和产生衬底偏置电压的方法
- Patent Title: Substrate bias voltage generator and method of generating substrate bias voltage
- Patent Title (中): 衬底偏置电压发生器和产生衬底偏置电压的方法
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Application No.: US11602347Application Date: 2006-11-21
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Publication No.: US07705660B2Publication Date: 2010-04-27
- Inventor: Jong-Won Lee
- Applicant: Jong-Won Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Priority: KR10-2005-0133716 20051229
- Main IPC: H03K3/01
- IPC: H03K3/01

Abstract:
A substrate bias voltage detection unit compares a level of a substrate bias voltage with a reference voltage in response to a self-refresh signal, an idle signal, and a refresh count signal so as to output an oscillating driving signal, enables the oscillating driving signal when the substrate bias voltage is equal to or higher than a first level in a normal mode, disables the oscillating driving signal when the substrate bias voltage is at a second level in a self-refresh mode, and disables the oscillating driving signal when the substrate bias voltage is at a third level in the self-refresh mode. An oscillation unit outputs an oscillating signal according to the oscillating driving signal. A voltage pumping unit controls pumping of the substrate bias voltage according to an output signal of the oscillation unit and then outputs a pumped substrate bias voltage.
Public/Granted literature
- US20070153611A1 Substrate bias voltage generator and method of generating substrate bias voltage Public/Granted day:2007-07-05
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