Invention Grant
US07705660B2 Substrate bias voltage generator and method of generating substrate bias voltage 失效
衬底偏置电压发生器和产生衬底偏置电压的方法

  • Patent Title: Substrate bias voltage generator and method of generating substrate bias voltage
  • Patent Title (中): 衬底偏置电压发生器和产生衬底偏置电压的方法
  • Application No.: US11602347
    Application Date: 2006-11-21
  • Publication No.: US07705660B2
    Publication Date: 2010-04-27
  • Inventor: Jong-Won Lee
  • Applicant: Jong-Won Lee
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: Venable LLP
  • Agent Jeffri A. Kaminski
  • Priority: KR10-2005-0133716 20051229
  • Main IPC: H03K3/01
  • IPC: H03K3/01
Substrate bias voltage generator and method of generating substrate bias voltage
Abstract:
A substrate bias voltage detection unit compares a level of a substrate bias voltage with a reference voltage in response to a self-refresh signal, an idle signal, and a refresh count signal so as to output an oscillating driving signal, enables the oscillating driving signal when the substrate bias voltage is equal to or higher than a first level in a normal mode, disables the oscillating driving signal when the substrate bias voltage is at a second level in a self-refresh mode, and disables the oscillating driving signal when the substrate bias voltage is at a third level in the self-refresh mode. An oscillation unit outputs an oscillating signal according to the oscillating driving signal. A voltage pumping unit controls pumping of the substrate bias voltage according to an output signal of the oscillation unit and then outputs a pumped substrate bias voltage.
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