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US07705977B2 Methods for depth profiling in semiconductors using modulated optical reflectance technology 有权
采用调制光学反射技术的半导体深度剖面方法

Methods for depth profiling in semiconductors using modulated optical reflectance technology
Abstract:
Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.
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