Invention Grant
- Patent Title: Methods for depth profiling in semiconductors using modulated optical reflectance technology
- Patent Title (中): 采用调制光学反射技术的半导体深度剖面方法
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Application No.: US11998118Application Date: 2007-11-28
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Publication No.: US07705977B2Publication Date: 2010-04-27
- Inventor: Alex Salnik , Jon Opsal , Lena Nicolaides
- Applicant: Alex Salnik , Jon Opsal , Lena Nicolaides
- Applicant Address: US CA San Jose
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Morrison & Foerster LLP
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.
Public/Granted literature
- US20080151247A1 Methods for depth profiling in semiconductors using modulated optical reflectance technology Public/Granted day:2008-06-26
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