Invention Grant
- Patent Title: Method of programming cross-point diode memory array
- Patent Title (中): 交叉点二极管存储器阵列编程方法
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Application No.: US12003571Application Date: 2007-12-28
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Publication No.: US07706177B2Publication Date: 2010-04-27
- Inventor: Christopher J. Petti
- Applicant: Christopher J. Petti
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Foley & Lardner LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A method of programming a nonvolatile memory array including a plurality of nonvolatile memory cells, a plurality of bit lines, and a plurality of word lines, wherein each memory cell comprises a diode, or a diode and a resistivity switching element is disclosed. The method includes both bias programming the memory cells of the device.
Public/Granted literature
- US20090168507A1 Method of programming cross-point diode memory array Public/Granted day:2009-07-02
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