Invention Grant
US07706190B2 Method of program-verifying a nonvolatile memory device using subdivided verifications with increasing verify voltages
失效
使用增加的验证电压的细分验证对非易失性存储器件进行程序验证的方法
- Patent Title: Method of program-verifying a nonvolatile memory device using subdivided verifications with increasing verify voltages
- Patent Title (中): 使用增加的验证电压的细分验证对非易失性存储器件进行程序验证的方法
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Application No.: US12163921Application Date: 2008-06-27
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Publication No.: US07706190B2Publication Date: 2010-04-27
- Inventor: Chang Won Yang , Jong Hyun Wang , Se Chun Park
- Applicant: Chang Won Yang , Jong Hyun Wang , Se Chun Park
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2007-0122619 20071129; KR10-2008-0044132 20080513
- Main IPC: G11C16/34
- IPC: G11C16/34
Abstract:
In a method of operating a non-volatile memory device subdivided verifications are performed by increasing verify voltages. Accordingly, threshold voltage distributions of memory cells can be narrowed and, therefore, the program performance of a flash memory device can be improved.
Public/Granted literature
- US20090141561A1 METHOD OF OPERATING A NON-VOLATILE MEMORY DEVICE Public/Granted day:2009-06-04
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