Invention Grant
- Patent Title: Dust-free and pore-free, high-purity granulated polysilicon
- Patent Title (中): 无尘，无孔，高纯度的多晶硅颗粒
-
Application No.: US11010525Application Date: 2004-12-13
-
Publication No.: US07708828B2Publication Date: 2010-05-04
- Inventor: Dieter Weidhaus , Ivo Crössmann , Franz Schreieder
- Applicant: Dieter Weidhaus , Ivo Crössmann , Franz Schreieder
- Applicant Address: DE Munich
- Assignee: Wacker-Chemie GmbH
- Current Assignee: Wacker-Chemie GmbH
- Current Assignee Address: DE Munich
- Agency: Collard & Roe, P.C.
- Priority: DE10359587 20031218
- Main IPC: C01B33/03
- IPC: C01B33/03 ; C01B33/027 ; C01B33/02 ; C30B21/06 ; C30B27/02 ; C30B28/10 ; B29C41/24 ; B29C43/22 ; B29D7/01
Abstract:
A polycrystalline granulated silicon is made of particles which have a density of greater than 99.9% of the theoretical solid density and therefore have a pore content of less than 0.1% and have a surface roughness Ra of less than 150 nm.
Public/Granted literature
- US20050135986A1 Dust-free and pore-free, high-purity granulated polysilicon Public/Granted day:2005-06-23
Information query
IPC分类:
