Invention Grant
- Patent Title: Process for producing ZnO single crystal according to method of liquid phase growth
- Patent Title (中): 按照液相生长方法生产ZnO单晶的方法
-
Application No.: US12224500Application Date: 2007-02-28
-
Publication No.: US07708831B2Publication Date: 2010-05-04
- Inventor: Hideyuki Sekiwa , Jun Kobayashi , Miyuki Miyamoto
- Applicant: Hideyuki Sekiwa , Jun Kobayashi , Miyuki Miyamoto
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Gas Chemical Company, Inc.
- Current Assignee: Mitsubishi Gas Chemical Company, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2006-055590 20060301
- International Application: PCT/JP2007/054380 WO 20070228
- International Announcement: WO2007/100146 WO 20070907
- Main IPC: C30B19/00
- IPC: C30B19/00 ; C30B28/10 ; C30B11/00
Abstract:
A method for producing a ZnO single crystal by a liquid phase growth technique, comprising the steps of: mixing and melting ZnO as a solute and PbF2 and PbO as solvents; and putting a seed crystal or substrate into direct contact with the obtained melted solution, thereby growing a ZnO single crystal on the seed crystal or substrate.
Public/Granted literature
- US20090044745A1 Process for Producing Zno Single Crystal According to Method of Liquid Phase Growth Public/Granted day:2009-02-19
Information query
