Invention Grant
- Patent Title: Method of forming metal oxide
- Patent Title (中): 形成金属氧化物的方法
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Application No.: US11775111Application Date: 2007-07-09
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Publication No.: US07708969B2Publication Date: 2010-05-04
- Inventor: Seok-Jun Won , Yong-Min Yoo , Min-Woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-Mi Song
- Applicant: Seok-Jun Won , Yong-Min Yoo , Min-Woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-Mi Song
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2006-0064250 20060710
- Main IPC: C01F17/00
- IPC: C01F17/00 ; C25D17/00

Abstract:
In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide.
Public/Granted literature
- US20080056975A1 Method of Forming Metal Oxide and Apparatus for Performing the Same Public/Granted day:2008-03-06
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