Invention Grant
- Patent Title: Refilling method by ion beam, instrument for fabrication and observation by ion beam, and manufacturing method of electronic device
- Patent Title (中): 离子束加注法，离子束制造和观察仪器及电子器件的制造方法
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Application No.: US10322591Application Date: 2002-12-19
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Publication No.: US07709062B2Publication Date: 2010-05-04
- Inventor: Hiroyasu Shichi , Muneyuki Fukuda , Isamu Sekihara , Satoshi Tomimatsu , Kaoru Umemura
- Applicant: Hiroyasu Shichi , Muneyuki Fukuda , Isamu Sekihara , Satoshi Tomimatsu , Kaoru Umemura
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, P.C.
- Priority: JP2002-118797 20020422
- Main IPC: C23C14/46
- IPC: C23C14/46 ; C23C16/48 ; B05D5/00 ; B05D1/26
Abstract:
A hole in a sample from which a sample piece has been extracted with a focused ion beam is filled at high speed using ion beam gas assisted deposition. A method of filling the hole by using the ion beam includes a step of irradiating the hole formed in a face of the sample with the ion beam to thereby form an ion beam gas-assisted deposition layer in the hole. The ion beam gas-assisted deposition layer is formed in the hole while controlling the area to which the ion beam is irradiated so as to cause the ion beam to fall on a part of a side wall of the hole and to not fall on another part of the side wall in an area scanned with the ion beam. The filled hole may then be covered with a protective film.
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