Invention Grant
US07709099B2 Bonded body, wafer support member using the same, and wafer treatment method
有权
接合体，使用其的晶片支撑构件和晶片处理方法
- Patent Title: Bonded body, wafer support member using the same, and wafer treatment method
- Patent Title (中): 接合体，使用其的晶片支撑构件和晶片处理方法
-
Application No.: US11479935Application Date: 2006-06-29
-
Publication No.: US07709099B2Publication Date: 2010-05-04
- Inventor: Kiyoshi Yokoyama
- Applicant: Kiyoshi Yokoyama
- Applicant Address: JP Kyoto
- Assignee: Kyocera Corporation
- Current Assignee: Kyocera Corporation
- Current Assignee Address: JP Kyoto
- Agency: Hogan & Hartson LLP
- Priority: JP2005-194837 20050704
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/302
Abstract:
A bonded body consisting of a ceramic member and a metal composite member of which bonding layer is less likely to be eroded by plasma is provided. The bonded body comprises the ceramic member that has two opposing main surfaces with a first metal layer provided on one of the main surfaces, the metal composite member that has two opposing main surfaces with a second metal layer provided on one of the main surfaces, and a brazing material layer that joins the first metal layer and the second metal layer, wherein the brazing material layer has an outer circumferential surface that has a depression formed therein at middle position in the direction of thickness thereof, with the depression having width at least one third the thickness of the brazing material layer.
Public/Granted literature
- US20070199660A1 Bonded body, wafer support member using the same, and wafer treatment method Public/Granted day:2007-08-30
Information query
IPC分类:
