Invention Grant
US07709159B2 Mask, mask forming method, pattern forming method, and wiring pattern forming method
有权
掩模，掩模形成方法，图案形成方法和布线图案形成方法
- Patent Title: Mask, mask forming method, pattern forming method, and wiring pattern forming method
- Patent Title (中): 掩模，掩模形成方法，图案形成方法和布线图案形成方法
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Application No.: US11328518Application Date: 2006-01-09
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Publication No.: US07709159B2Publication Date: 2010-05-04
- Inventor: Kazushige Umetsu , Shinichi Yotsuya
- Applicant: Kazushige Umetsu , Shinichi Yotsuya
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2005-013696 20050121
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A mask, which is used to form predetermined patterns on a substrate, includes a pattern forming member that is provided with openings corresponding to the predetermined patterns; and a pattern holding member that overlaps one surface of the pattern forming member.
Public/Granted literature
- US20060166111A1 Mask, mask forming method, pattern forming method, and wiring pattern forming method Public/Granted day:2006-07-27
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