Invention Grant
US07709160B2 Method for manufacturing attenuated phase-shift masks and devices obtained therefrom
有权
用于制造衰减的相移掩模的方法及其获得的装置
- Patent Title: Method for manufacturing attenuated phase-shift masks and devices obtained therefrom
- Patent Title (中): 用于制造衰减的相移掩模的方法及其获得的装置
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Application No.: US11645156Application Date: 2006-12-22
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Publication No.: US07709160B2Publication Date: 2010-05-04
- Inventor: Masaki Yoshizawa , Leonardus Leunissen
- Applicant: Masaki Yoshizawa , Leonardus Leunissen
- Applicant Address: BE Leuven JP Tokyo
- Assignee: IMEC,Sony Corporation
- Current Assignee: IMEC,Sony Corporation
- Current Assignee Address: BE Leuven JP Tokyo
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: EP05077992 20051227
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
One inventive aspect relates to an attenuated phase shift mask suitable for hyper NA lithographic processing of a device, to a method of making such a mask and to hyper NA lithographic processing using such a mask. The attenuated phase shift mask is made taking into the effect of the numerical aperture of the lithographic system on which the attenuated phase shift mask is to be used.
Public/Granted literature
- US20070178392A1 Method for manufacturing attenuated phase-shift masks and devices obtained therefrom Public/Granted day:2007-08-02
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