Invention Grant
- Patent Title: Photomask producing method and photomask blank
- Patent Title (中): 光掩模生产方法和光掩模坯料
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Application No.: US11949566Application Date: 2007-12-03
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Publication No.: US07709161B2Publication Date: 2010-05-04
- Inventor: Yasushi Okubo , Mutsumi Hara
- Applicant: Yasushi Okubo , Mutsumi Hara
- Applicant Address: JP Tokyo
- Assignee: Hoya Corporation
- Current Assignee: Hoya Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2003-105921 20030409
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
In a photomask blank serving as a base member for producing a halftone-type phase shift mask in which a light-transmissive substrate is formed thereon with a light-semitransmissive phase shift pattern having a desired opening, a light-semitransmissive phase shift film, a chromium film, and an etching mask film are stacked in order on the light-transmissive substrate. The etching mask film is made of an inorganic-based material having a resistance against dry etching of the chromium film. The photomask blank further may has a resist film formed on the etching mask film.
Public/Granted literature
- US20080286662A1 PHOTOMASK PRODUCING METHOD AND PHOTOMASK BLANK Public/Granted day:2008-11-20
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