Invention Grant
- Patent Title: Method for forming an RuOx electrode and structure
- Patent Title (中): RuOx电极和结构的形成方法
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Application No.: US11806191Application Date: 2007-05-30
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Publication No.: US07709274B1Publication Date: 2010-05-04
- Inventor: Steven R. Collins , Abron S. Toure , Steven D. Bernstein
- Applicant: Steven R. Collins , Abron S. Toure , Steven D. Bernstein
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agent John Tarlano
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for forming an RuOx electrode comprising depositing a TiW layer on an RuOx layer, forming a photo-resist mask on the TiW layer, in order to mask the TiW layer into a masked TiW layer, etching the masked TiW layer with a CF4 plasma, a TiW mask being formed on the RuOx layer, the CF4 plasma is not etching the RuOx and vaporizing unmasked RuOx portion of the RuOx layer with an oxygen plasma, the masked RuOx layer being formed into an RuOx electrode.
Information query
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