Invention Grant
- Patent Title: Manufacturing method of a semiconductor device and substrate processing apparatus
- Patent Title (中): 半导体器件和衬底处理设备的制造方法
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Application No.: US12155221Application Date: 2008-05-30
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Publication No.: US07709276B2Publication Date: 2010-05-04
- Inventor: Hideharu Itatani , Kazuhiro Harada
- Applicant: Hideharu Itatani , Kazuhiro Harada
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2007-145870 20070531
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A by-product (e.g., RuF5) that is produced in the process of cleaning may cover a cleaning subject film and may obstruct the progress of the cleaning. To suppress an accumulation of the by-product, a cleaning operation is divided into plural operations, performing vacuum evacuation between the divided operations to evaporate the by-product and expose a new surface of the cleaning subject film between each supply of cleaning gas.
Public/Granted literature
- US20080305633A1 Manufacturing method of a semiconductor device and substrate processing apparatus Public/Granted day:2008-12-11
Information query
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