Invention Grant
US07709284B2 Method for deposition of magnesium doped (Al, In, Ga, B)N layers
有权
掺杂镁（Al，In，Ga，B）N层的方法
- Patent Title: Method for deposition of magnesium doped (Al, In, Ga, B)N layers
- Patent Title (中): 掺杂镁（Al，In，Ga，B）N层的方法
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Application No.: US11840057Application Date: 2007-08-16
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Publication No.: US07709284B2Publication Date: 2010-05-04
- Inventor: Michael Iza , Hitoshi Sato , Steven P. DenBaars , Shuji Nakamura
- Applicant: Michael Iza , Hitoshi Sato , Steven P. DenBaars , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00
Abstract:
A method for growing an improved quality device by depositing a low temperature (LT) magnesium (Mg) doped nitride semiconductor thin film. The low temperature Mg doped nitride semiconductor thin film may have a thickness greater than 50 nm. A multi quantum well (MQW) active layer may be grown at a growth temperature and the LT Mg doped nitride semiconductor thin film may deposited on the MQW active layer at a substrate temperature no greater than 150° C. above the growth temperature.
Public/Granted literature
- US20080042121A1 METHOD FOR DEPOSITION OF MAGNESIUM DOPED (Al, In, Ga, B)N LAYERS Public/Granted day:2008-02-21
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