Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11699793Application Date: 2007-01-30
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Publication No.: US07709295B2Publication Date: 2010-05-04
- Inventor: Takashi Fujimura
- Applicant: Takashi Fujimura
- Applicant Address: JP
- Assignee: Seikoi Instruments Inc.
- Current Assignee: Seikoi Instruments Inc.
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2006-031211 20060208
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
In a method of manufacturing a semiconductor device, a passivation film made of a polyimide resin film is formed on a front surface of a semiconductor wafer including a scribe line and an outer circumferential portion. Thereafter, only the passivation film which is formed on the scribe line of the semiconductor wafer and on the outer circumferential portion of the semiconductor wafer is selectively removed. A protective tape is then bonded onto the front surface of the semiconductor wafer, followed by grinding of a rear surface of the semiconductor wafer.
Public/Granted literature
- US20070184660A1 Method of manufacturing semiconductor device Public/Granted day:2007-08-09
Information query
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