Invention Grant
- Patent Title: Active layer island
- Patent Title (中): 有源层岛
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Application No.: US10542546Application Date: 2004-01-19
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Publication No.: US07709306B2Publication Date: 2010-05-04
- Inventor: Henning Sirringhaus , Catherine Ramsdale
- Applicant: Henning Sirringhaus , Catherine Ramsdale
- Applicant Address: GB Cambridge
- Assignee: Plastic Logic Limited
- Current Assignee: Plastic Logic Limited
- Current Assignee Address: GB Cambridge
- Agency: Sughrue Mion, PLLC
- Priority: GB0301089.9 20030117
- International Application: PCT/GB2004/000161 WO 20040119
- International Announcement: WO2004/066477 WO 20040805
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84

Abstract:
A method for forming an electronic device including at least one electrically conductive and one semiconductive material deposited from solution, the method comprising: forming on the substrate a confinement structure consisting of a least a first zone and a second zone, depositing the electrically conductive material on the substrate, wherein the electrically conductive material is absent from both the first and second zone, and subsequently depositing the electrically semiconductive material from solution, wherein the semiconductive material is absent from the first zone, but not from the second zone.
Public/Granted literature
- US20060160277A1 Active layer island Public/Granted day:2006-07-20
Information query
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