Invention Grant
US07709308B2 Semiconductor devices and methods of fabricating the same including forming a fin with first and second gates on the sidewalls
有权
半导体器件及其制造方法,包括在侧壁上形成具有第一和第二栅极的鳍片
- Patent Title: Semiconductor devices and methods of fabricating the same including forming a fin with first and second gates on the sidewalls
- Patent Title (中): 半导体器件及其制造方法,包括在侧壁上形成具有第一和第二栅极的鳍片
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Application No.: US12194343Application Date: 2008-08-19
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Publication No.: US07709308B2Publication Date: 2010-05-04
- Inventor: Chang-Woo Oh , Ki-Whan Song
- Applicant: Chang-Woo Oh , Ki-Whan Song
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello LLP
- Priority: KR10-2005-0115640 20051130
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/338 ; H01L21/336

Abstract:
Disclosed is a semiconductor device and method of fabricating the same. The device is disposed on a substrate, including a fin constructed with first and second sidewalls, a first gate line formed in the pattern of spacer on the first sidewall of the fin, and a second gate line formed in the pattern of spacer on the second sidewall of the fin. First and second impurity regions are disposed in the fin. The first and second impurity regions are isolated from each other and define a channel region in the fin between the first and second gate lines.
Public/Granted literature
- US20090035903A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2009-02-05
Information query
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