Invention Grant
US07709310B2 Semiconductor device with mushroom electrode and manufacture method thereof
有权
具有蘑菇电极的半导体器件及其制造方法
- Patent Title: Semiconductor device with mushroom electrode and manufacture method thereof
- Patent Title (中): 具有蘑菇电极的半导体器件及其制造方法
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Application No.: US12003559Application Date: 2007-12-28
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Publication No.: US07709310B2Publication Date: 2010-05-04
- Inventor: Kozo Markiyama , Naoya Ikechi , Takahiro Tan
- Applicant: Kozo Markiyama , Naoya Ikechi , Takahiro Tan
- Applicant Address: JP Kawasaki JP Yamanashi
- Assignee: Fujitsu Limited,Fujitsu Quantum Devices Limited
- Current Assignee: Fujitsu Limited,Fujitsu Quantum Devices Limited
- Current Assignee Address: JP Kawasaki JP Yamanashi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2001-236301 20010803; JP2002-019361 20020129
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/44 ; H01L21/302 ; H01L21/338
Abstract:
A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.
Public/Granted literature
- US20080113499A1 Semiconductor device with mushroom electrode and manufacture method thereof Public/Granted day:2008-05-15
Information query
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