Invention Grant
US07709311B1 JFET device with improved off-state leakage current and method of fabrication
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具有改善的截止状态漏电流的JFET器件和制造方法
- Patent Title: JFET device with improved off-state leakage current and method of fabrication
- Patent Title (中): 具有改善的截止状态漏电流的JFET器件和制造方法
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Application No.: US12178404Application Date: 2008-07-23
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Publication No.: US07709311B1Publication Date: 2010-05-04
- Inventor: Samar K. Saha , Ashok K. Kapoor
- Applicant: Samar K. Saha , Ashok K. Kapoor
- Applicant Address: US CA Los Gatos
- Assignee: SuVolta, Inc.
- Current Assignee: SuVolta, Inc.
- Current Assignee Address: US CA Los Gatos
- Agency: Baker Botts L.L.P.
- Main IPC: H01L21/337
- IPC: H01L21/337
Abstract:
A junction field effect transistor comprises a semiconductor substrate. A first impurity region of a first conductivity type is formed in the substrate. A second impurity region of the first conductivity type is formed in the substrate and spaced apart from the first impurity region. A channel region of the first conductivity type is formed between the first and second impurity regions. A gate region of a second conductivity type is formed in the substrate between the first and second impurity regions. A gap region is formed in the substrate between the gate region and the first impurity region such that the first impurity region is spaced apart from the gate region.
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