Method for fabricating a semiconductor device

Invention Grant

US07709318B2 Method for fabricating a semiconductor device 有权

Title translation: 半导体器件的制造方法

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Patent Title: Method for fabricating a semiconductor device
Patent Title (中): 半导体器件的制造方法
Application No.: US11682176

Application Date: 2007-03-05
Publication No.: US07709318B2

Publication Date: 2010-05-04
Inventor: Jar-Ming Ho , Mao-Ying Wang
Applicant: Jar-Ming Ho , Mao-Ying Wang
Applicant Address: TW Taoyuan
Assignee: Nanya Technology Corporation
Current Assignee: Nanya Technology Corporation
Current Assignee Address: TW Taoyuan
Agency: Quintero Law Office
Priority: TW95107903 20060309
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L21/8242 ; H01L21/76 ; H01L21/3205

Method for fabricating a semiconductor device

Abstract:

An embodiment of the invention provides a method for forming a semiconductor device comprising providing a substrate with a pad layer formed thereon. The pad layer and the substrate are patterned to form a plurality of trenches. A trench top insulating layer is formed in each trench. Wherein the trench top insulating layer protrudes from the substrate and has an extension portion extending to the pad layer. The pad layer and the substrate are etched by using the trench top insulating layers and the extension portions as a mask to form a recess in the substrate. And a recess gate is formed in the recess.

Abstract(Chinese):

本发明的一个实施例提供了一种用于形成半导体器件的方法，包括提供其上形成有衬垫层的衬底。图案化衬垫层和衬底以形成多个沟槽。在每个沟槽中形成沟槽顶部绝缘层。其中沟槽顶部绝缘层从衬底突出并且具有延伸到衬垫层的延伸部分。通过使用沟槽顶部绝缘层和延伸部分作为掩模来蚀刻衬垫层和衬底，以在衬底中形成凹陷。并且在凹部中形成凹槽。

Public/Granted literature

US20070210375A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE Public/Granted day:2007-09-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺