Invention Grant
US07709320B2 Method of fabricating trench capacitors and memory cells using trench capacitors
失效
使用沟槽电容器制造沟槽电容器和存储单元的方法
- Patent Title: Method of fabricating trench capacitors and memory cells using trench capacitors
- Patent Title (中): 使用沟槽电容器制造沟槽电容器和存储单元的方法
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Application No.: US11427065Application Date: 2006-06-28
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Publication No.: US07709320B2Publication Date: 2010-05-04
- Inventor: Kangguo Cheng , Xi Li
- Applicant: Kangguo Cheng , Xi Li
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Ian D. MacKinnon
- Main IPC: H01L21/8242
- IPC: H01L21/8242 ; H01L27/108
Abstract:
A method of forming a trench capacitor and memory cells using the trench capacitor. The method includes: forming an opening in a masking layer; and forming a trench in the substrate through the opening, the trench having contiguous upper, middle and lower regions, the trench extending from a top surface of said substrate into the substrate, the upper region of the trench adjacent to the top surface of the substrate having a vertical sidewall profile and a first width in the horizontal direction, the middle region of the trench having a tapered sidewall profile, a width in a horizontal direction of the middle region at a juncture of the upper region and the middle region being the first width and being greater than a second width in the horizontal direction of the middle region at a juncture of the middle region and the lower region.
Public/Granted literature
- US20080001196A1 TRENCH CAPACITORS AND MEMORY CELLS USING TRENCH CAPACITORS AND METHOD OF FABRICATING SAME Public/Granted day:2008-01-03
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