Invention Grant
- Patent Title: Methods of forming semiconductor-on-insulator substrates, and integrated circuitry
- Patent Title (中): 形成绝缘体上半导体衬底和集成电路的方法
-
Application No.: US11724575Application Date: 2007-03-14
-
Publication No.: US07709327B2Publication Date: 2010-05-04
- Inventor: David H. Wells
- Applicant: David H. Wells
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
Public/Granted literature
- US20080185647A1 Methods of forming semiconductor-on-insulator substrates, and integrated circuitry Public/Granted day:2008-08-07
Information query
IPC分类: