Invention Grant
US07709334B2 Stacked non-volatile memory device and methods for fabricating the same
有权
堆叠的非易失性存储器件及其制造方法
- Patent Title: Stacked non-volatile memory device and methods for fabricating the same
- Patent Title (中): 堆叠的非易失性存储器件及其制造方法
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Application No.: US11425959Application Date: 2006-06-22
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Publication No.: US07709334B2Publication Date: 2010-05-04
- Inventor: Erh-Kun Lai , Hang-Ting Lue , Kuang-Yeu Hsieh
- Applicant: Erh-Kun Lai , Hang-Ting Lue , Kuang-Yeu Hsieh
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A stacked non-volatile memory device comprises a plurality of bit line and word line layers stacked on top of each other. The bit line layers comprise a plurality of bit lines that can be formed using advanced processing techniques making fabrication of the device efficient and cost effective. The device can be configured for NAND operation.
Public/Granted literature
- US20070134855A1 A STACKED NON-VOLATILE MEMORY DEVICE AND METHODS FOR FABRICATING THE SAME Public/Granted day:2007-06-14
Information query
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