Invention Grant
US07709338B2 BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices
有权
具有自对准发射极的BiCMOS器件和制造这种BiCMOS器件的方法
- Patent Title: BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices
- Patent Title (中): 具有自对准发射极的BiCMOS器件和制造这种BiCMOS器件的方法
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Application No.: US11614757Application Date: 2006-12-21
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Publication No.: US07709338B2Publication Date: 2010-05-04
- Inventor: Qizhi Liu , Peter B. Gray , Alvin J. Joseph
- Applicant: Qizhi Liu , Peter B. Gray , Alvin J. Joseph
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
A method of fabricating an heterojunction bipolar transistor (HBT) structure in a bipolar complementary metal-oxide-semiconductor (BiCMOS) process selectively thickens an oxide layer overlying a base region in areas that are not covered by a temporary emitter and spacers such that the temporary emitter can be removed and the base-emitter junction can be exposed without also completely removing the oxide overlying the areas of the base region that are not covered by the temporary emitter or spacers. As a result, a photomask is not required to remove the temporary emitter and to expose the base-emitter junction.
Public/Granted literature
- US20090020851A1 BICMOS DEVICES WITH A SELF-ALIGNED EMITTER AND METHODS OF FABRICATING SUCH BICMOS DEVICES Public/Granted day:2009-01-22
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