Invention Grant
US07709340B2 Semiconductor integrated circuit device and method of manufacturing the same 有权
半导体集成电路器件及其制造方法

Semiconductor integrated circuit device and method of manufacturing the same
Abstract:
A semiconductor integrated circuit device may include a semiconductor substrate, a static memory cell on the semiconductor substrate, a tensile stress film on the pull-down transistors, and a compressive stress film on the pass transistors. The static memory cell may include multiple pull-up transistors and pull-down transistors, which form a latch, and multiple pass transistors may be used to access the latch.
Information query
Patent Agency Ranking
0/0