Invention Grant
- Patent Title: Semiconductor integrated circuit device and method of manufacturing the same
- Patent Title (中): 半导体集成电路器件及其制造方法
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Application No.: US11705164Application Date: 2007-02-12
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Publication No.: US07709340B2Publication Date: 2010-05-04
- Inventor: Jong-hyon Ahn , Jae-cheol Yoo , Ki-seog Youn , Kwan-jong Roh , Su-gon Bae , Ki-young Kim
- Applicant: Jong-hyon Ahn , Jae-cheol Yoo , Ki-seog Youn , Kwan-jong Roh , Su-gon Bae , Ki-young Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2006-0013893 20060213
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A semiconductor integrated circuit device may include a semiconductor substrate, a static memory cell on the semiconductor substrate, a tensile stress film on the pull-down transistors, and a compressive stress film on the pass transistors. The static memory cell may include multiple pull-up transistors and pull-down transistors, which form a latch, and multiple pass transistors may be used to access the latch.
Public/Granted literature
- US20070187770A1 Semiconductor integrated circuit device and method of manufacturing the same Public/Granted day:2007-08-16
Information query
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