Invention Grant
- Patent Title: Methods of shaping vertical single crystal silicon walls and resulting structures
- Patent Title (中): 垂直单晶硅壁和结构的垂直方法
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Application No.: US11445544Application Date: 2006-06-02
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Publication No.: US07709341B2Publication Date: 2010-05-04
- Inventor: Janos Fucsko , David H. Wells , Patrick Flynn , Whonchee Lee
- Applicant: Janos Fucsko , David H. Wells , Patrick Flynn , Whonchee Lee
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.
Public/Granted literature
- US20070281493A1 Methods of shaping vertical single crystal silicon walls and resulting structures Public/Granted day:2007-12-06
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