Invention Grant
- Patent Title: Use of a plasma source to form a layer during the formation of a semiconductor device
- Patent Title (中): 在形成半导体器件期间使用等离子体源形成层
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Application No.: US12235351Application Date: 2008-09-22
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Publication No.: US07709343B2Publication Date: 2010-05-04
- Inventor: Thomas A. Figura , Kevin G. Donohoe , Thomas Dunbar
- Applicant: Thomas A. Figura , Kevin G. Donohoe , Thomas Dunbar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/302
Abstract:
A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further comprising a conductive layer over the surface and in the contact. Next, in the chamber, a layer of etch resistant material is formed within the contact over the conductive layer, the etch resistant material not forming over the surface.
Public/Granted literature
- US20090017634A1 USE OF A PLASMA SOURCE TO FORM A LAYER DURING THE FORMATION OF A SEMICONDUCTOR DEVICE Public/Granted day:2009-01-15
Information query
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