Invention Grant
US07709344B2 Integrated circuit fabrication process using gas cluster ion beam etching
有权
使用气体簇离子束蚀刻的集成电路制造工艺
- Patent Title: Integrated circuit fabrication process using gas cluster ion beam etching
- Patent Title (中): 使用气体簇离子束蚀刻的集成电路制造工艺
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Application No.: US11164423Application Date: 2005-11-22
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Publication No.: US07709344B2Publication Date: 2010-05-04
- Inventor: Shyng-Tsong T. Chen , John A. Fitzsimmons , Shom S. Ponoth , Terry A. Spooner
- Applicant: Shyng-Tsong T. Chen , John A. Fitzsimmons , Shom S. Ponoth , Terry A. Spooner
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Greenblum & Bernstein P.L.C.
- Agent Wenjie Li
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method comprises depositing a dielectric film layer, a hard mask layer, and a patterned photo resist layer on a substrate. The method further includes selectively etching the dielectric film layer to form sub-lithographic features by reactive ion etch processing and depositing a barrier metal layer and a copper layer. The method further includes etching the barrier metal layer and hard mask layer by gas cluster ion beam (GCIB) processing.
Public/Granted literature
- US20070117342A1 GCIB LINER AND HARDMASK REMOVAL PROCESS Public/Granted day:2007-05-24
Information query
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