Invention Grant
- Patent Title: Method of manufacturing semiconductor device and method of manufacturing bonding sheet
- Patent Title (中): 半导体器件的制造方法和接合片的制造方法
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Application No.: US11277928Application Date: 2006-03-29
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Publication No.: US07709351B2Publication Date: 2010-05-04
- Inventor: Shinsuke Suzuki
- Applicant: Shinsuke Suzuki
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, PC
- Priority: JP2005-143629 20050517
- Main IPC: H01L21/46
- IPC: H01L21/46
Abstract:
A method of manufacturing a semiconductor device includes the steps of: preparing a bonding sheet having one or more holes that penetrate from a first surface to an opposite second surface thereof, and a semiconductor wafer having a semiconductor element; affixing the bonding sheet to a predetermined surface of the semiconductor wafer; and evacuating gas present between the bonding sheet and the semiconductor wafer via the one or more holes.
Public/Granted literature
- US20060263941A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING BONDING SHEET Public/Granted day:2006-11-23
Information query
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