Invention Grant
- Patent Title: Method for manufacturing a crystalline silicon layer
- Patent Title (中): 晶体硅层的制造方法
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Application No.: US12113783Application Date: 2008-05-01
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Publication No.: US07709360B2Publication Date: 2010-05-04
- Inventor: Dries Van Gestel
- Applicant: Dries Van Gestel
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A method of forming a crystalline silicon layer on a microrough face of a substrate by reducing the microroughness of the face and then performing a metal induced crystallization process on the face is disclosed. The method further comprises, after metal induced crystallization and before removing the metal layer, removing silicon islands using the metal layer as a mask.
Public/Granted literature
- US20080268622A1 METHOD FOR MANUFACTURING A CRYSTALLINE SILICON LAYER Public/Granted day:2008-10-30
Information query
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