Invention Grant
- Patent Title: CMOS well structure and method of forming the same
- Patent Title (中): CMOS阱结构及其形成方法
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Application No.: US11551959Application Date: 2006-10-23
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Publication No.: US07709365B2Publication Date: 2010-05-04
- Inventor: Wilfried Haensch , Terence B. Hook , Louis C. Hsu , Rajiv V. Joshi , Werner Rausch
- Applicant: Wilfried Haensch , Terence B. Hook , Louis C. Hsu , Rajiv V. Joshi , Werner Rausch
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L21/38
Abstract:
A method for forming a CMOS well structure including forming a plurality of first conductivity type wells over a substrate, each of the plurality of first conductivity type wells formed in a respective opening in a first mask. A cap is formed over each of the first conductivity type wells, and the first mask is removed. Sidewall spacers are formed on sidewalls of each of the first conductivity type wells. A plurality of second conductivity type wells are formed, each of the plurality of second conductivity type wells are formed between respective first conductivity type wells. A plurality of shallow trench isolations are formed between the first conductivity type wells and second conductive type wells. The plurality of first conductivity type wells are formed by a first selective epitaxial growth process, and the plurality of second conductivity type wells are formed by a second selective epitaxial growth process.
Public/Granted literature
- US20070045749A1 CMOS WELL STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2007-03-01
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