Method for forming a roughened contact in a semiconductor device

Invention Grant

US07709369B2 Method for forming a roughened contact in a semiconductor device 失效

Title translation: 在半导体器件中形成粗糙接触的方法

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Patent Title: Method for forming a roughened contact in a semiconductor device
Patent Title (中): 在半导体器件中形成粗糙接触的方法
Application No.: US11679178

Application Date: 2007-02-26
Publication No.: US07709369B2

Publication Date: 2010-05-04
Inventor: Jung-Seock Lee , Ky-Hyun Han
Applicant: Jung-Seock Lee , Ky-Hyun Han
Applicant Address: KR Icheon-si
Assignee: Hynix Semiconductor Inc.
Current Assignee: Hynix Semiconductor Inc.
Current Assignee Address: KR Icheon-si
Agency: Townsend and Townsend and Crew LLP
Priority: KR10-2006-0108385 20061103
Main IPC: H01L21/4763
IPC: H01L21/4763

Method for forming a roughened contact in a semiconductor device

Abstract:

A method for forming a contact in a semiconductor device includes opening a contact hole exposing a surface of a substrate, performing a first post treatment to form a rough portion at a bottom surface of the contact hole, and performing a second post treatment. The first post treatment includes using a fluorocarbon gas and the second post treatment includes using a nitrogen trifluoride (NF3) gas.

Abstract(Chinese):

一种用于在半导体器件中形成接触的方法包括打开暴露衬底表面的接触孔，执行第一后处理以在接触孔的底面形成粗糙部分，并进行第二后处理。第一后处理包括使用碳氟化合物气体，第二后处理包括使用三氟化氮（NF 3）气体。

Public/Granted literature

US20080108216A1 METHOD FOR FORMING CONTACT IN SEMICONDUCTOR DEVICE Public/Granted day:2008-05-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）