A method of fabricating a semiconductor device includes forming a barrier film over a semiconductor substrate and over a gate disposed on the substrate; forming a metal layer over the barrier film; selectively etching the metal layer and the barrier film to form a contact pattern between the gates; forming a spacer over a sidewall of the contact pattern; forming an interlayer insulating film over the contact pattern and the gate; and polishing the interlayer insulating film to expose the contact pattern.