Invention Grant
- Patent Title: Method and apparatus for processing thin metal layers
- Patent Title (中): 用于处理薄金属层的方法和装置
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Application No.: US11502056Application Date: 2006-08-10
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Publication No.: US07709378B2Publication Date: 2010-05-04
- Inventor: James S. Im
- Applicant: James S. Im
- Applicant Address: US NY New York
- Assignee: The Trustees of Columbia University in the City of New York
- Current Assignee: The Trustees of Columbia University in the City of New York
- Current Assignee Address: US NY New York
- Agency: Baker Botts LLP
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method and apparatus for processing a thin metal layer on a substrate to control the grain size, grain shape, and grain boundary location and orientation in the metal layer by irradiating the metal layer with a first excimer laser pulse having an intensity pattern defined by a mask to have shadow regions and beamlets. Each region of the metal layer overlapped by a beamlet is melted throughout its entire thickness, and each region of the metal layer overlapped by a shadow region remains at least partially unmelted. After completion of resolidification of the melted regions following irradiation by the first excimer laser pulse, the metal layer is irradiated by a second excimer laser pulse having a shifted intensity pattern so that the shadow regions overlap regions of the metal layer having fewer and larger grains.
Public/Granted literature
- US20090140173A1 METHOD AND APPARATUS FOR PROCESSING THIN METAL LAYERS Public/Granted day:2009-06-04
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