Invention Grant
- Patent Title: Electroprocessing profile control
- Patent Title (中): 电加工配置文件控制
-
Application No.: US11877233Application Date: 2007-10-23
-
Publication No.: US07709382B2Publication Date: 2010-05-04
- Inventor: Antoine P. Manens , Vladimir Galburt , Yan Wang , Alain Duboust , Donald J. K. Olgado , Liang-Yuh Chen
- Applicant: Antoine P. Manens , Vladimir Galburt , Yan Wang , Alain Duboust , Donald J. K. Olgado , Liang-Yuh Chen
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/302 ; H01L21/461

Abstract:
Embodiments of the present invention provide methods of electroprocessing a substrate. One embodiment of the present invention provides a method comprises pressing a substrate against a polishing pad with a force less than about two pounds per square inch, the substrate contacting a first electrode of the polishing pad, applying an electrical bias to the substrate with the first electrode relative to a second electrode of the polishing pad, wherein the second electrode is disposed below the second electrode, and biasing a third electrode disposed in the polishing pad radially outward of the second electrode.
Public/Granted literature
- US20080045012A1 ELECTROPROCESSING PROFILE CONTROL Public/Granted day:2008-02-21
Information query
IPC分类: